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LSLM 500 Stepper Lithography Machine

An apparatus for manufacturing integrated circuits can transfer a mask pattern at a reduced scale to the surface of a substrate to be exposed. This allows for the formation of millions of microscopic circuit elements on a tiny silicon wafer surface, a crucial component of complex processes. It is widely used in the research and production of small- and medium-scale integrated circuits, semiconductor devices, and surface acoustic wave devices.

    Features

    Precise Pattern Transfer: It can accurately transfer the mask pattern to the substrate surface at a reduced scale, ensuring the high precision and consistency of microscopic circuit elements, which is essential for the normal operation of integrated circuits.

    High Integration Adaptability: It supports the formation of millions of microscopic circuit elements on a single tiny silicon wafer, adapting to the high integration requirements of small- and medium-scale integrated circuits and meeting the demand for dense circuit layout.

    Wide Application Scope: It is widely used in the R&D and production of small- and medium-scale ICs, semiconductor devices, and surface acoustic wave devices, covering multiple fields of the semiconductor industry and having strong versatility.

    Core Process Support: As a key equipment in the IC manufacturing process, it connects the mask design and wafer fabrication links, providing a critical guarantee for the smooth progress of the entire complex manufacturing process.

    Stable and Reliable Performance: It features stable operation and high reliability, which can meet the long-term continuous production needs of industrialization and the high-precision requirements of laboratory research.

    Product Parameters

    Item Technical Specification
    Product name Stepper lithography machine
    Product model LSLM 500
    Wafer Size 4-inch, 6-inch, 8-inch, 12-inch
    Exposure light source UV-LED
    Resolution Develop 500 nm, 400 nm, 300 nm, and 150 nm sequentially
    Alignment accuracy 150 nm
    Exposure method Stepped projection type
    Scaling ratio 1:7
    Feature size uniformity (CDU) ±10%

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