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China LSLM 500 Stepper Lithography Machine: Leading Suppliers & Factory for Integrated Circuit Manufacturing

Introducing a state-of-the-art apparatus for manufacturing integrated circuits, designed for precision mask pattern transfer at a reduced scale onto substrate surfaces. This innovative technology enables the creation of millions of microscopic circuit elements on small silicon wafer surfaces, essential for advanced processes. Our equipment is a preferred choice among China suppliers and factories involved in the research and production of small- and medium-scale integrated circuits, semiconductor devices, and surface acoustic wave devices. Enhance your production capabilities with our cutting-edge integrated circuit manufacturing solutions

    Features
    Precise Pattern Transfer

    It can accurately transfer the mask pattern to the substrate surface at a reduced scale, ensuring the high precision and consistency of microscopic circuit elements, which is essential for the normal operation of integrated circuits.

    High Integration Adaptability

    It supports the formation of millions of microscopic circuit elements on a single tiny silicon wafer, adapting to the high integration requirements of small- and medium-scale integrated circuits and meeting the demand for dense circuit layout.

    Wide Application Scope

    It is widely used in the R&D and production of small- and medium-scale ICs, semiconductor devices, and surface acoustic wave devices, covering multiple fields of the semiconductor industry and having strong versatility.

    Core Process Support

    As a key equipment in the IC manufacturing process, it connects the mask design and wafer fabrication links, providing a critical guarantee for the smooth progress of the entire complex manufacturing process.

    Stable and Reliable Performance

    It features stable operation and high reliability, which can meet the long-term continuous production needs of industrialization and the high-precision requirements of laboratory research.

    Product Parameters
    Item Technical Specification
    Product Name Stepper lithography machine
    Product Model LSLM 500
    Wafer Size 4-inch, 6-inch, 8-inch, 12-inch
    Exposure Light Source UV-LED
    Resolution Develop 500 nm, 400 nm, 300 nm, and 150 nm sequentially
    Alignment Accuracy 150 nm
    Exposure Method Stepped projection type
    Scaling Ratio 1:7
    Feature Size Uniformity (CDU) ±10%
    Frequently Asked Questions
    Q1 What wafer sizes does the LSLM 500 stepper lithography machine support?
    The LSLM 500 supports 4-inch, 6-inch, 8-inch, and 12-inch wafers, making it compatible with a wide range of semiconductor manufacturing processes and research applications.
    Q2 What is the resolution capability of the LSLM 500?
    The LSLM 500 is capable of sequentially achieving resolutions of 500 nm, 400 nm, 300 nm, and 150 nm, allowing it to meet the demands of both current and progressively finer semiconductor fabrication nodes.
    Q3 What type of exposure light source does the LSLM 500 use?
    The LSLM 500 uses a UV-LED exposure light source, which offers energy efficiency, long operational lifespan, and stable output — contributing to consistent lithography performance across production runs.
    Q4 What industries or applications is the LSLM 500 suitable for?
    The LSLM 500 is widely applicable in the R&D and production of small- and medium-scale integrated circuits (ICs), semiconductor devices, and surface acoustic wave devices, serving both industrial manufacturing environments and laboratory research settings.
    Q5 What is the alignment accuracy of the LSLM 500 stepper?
    The LSLM 500 achieves an alignment accuracy of 150 nm, ensuring precise layer-to-layer registration during multi-step lithography processes, which is critical for producing reliable and high-performance integrated circuits.
    Q6 What does the scaling ratio of 1:7 mean for the LSLM 500?
    A scaling ratio of 1:7 means the machine reduces the mask pattern by a factor of 7 when projecting it onto the wafer surface. This demagnification enables the creation of extremely fine circuit features that are significantly smaller than the original mask design, supporting high-density circuit integration.

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